High NA EUV Capabilities for High Volume Manufacturing
Extreme Ultraviolet (EUV) lithography remains pivotal in enabling cost-effective scaling for advanced semiconductor manufacturing. The transition from 0.33 NA to 0.55 NA offers key customer value drivers and substantial benefits for high-volume manufacturing (HVM), including reduced patterning cost of technology through single exposure per layer, minimized defect density, and relieving multi-patterning design constraints to boost device performance.
As the High NA EUV installed base is growing, R&D activities at multiple customer sites and in the imec-ASML High NA Lab are unlocking the imaging capabilities of the High NA platform. Proven performance of the EXE:5000 and EXE:5200B systems and ecosystem developments continue to drive pitch shrink.
This presentation outlines the recent progress in platform capability and maturity, including proof data for upcoming Logic and DRAM nodes, and the system availability status.
Furthermore, we will present the roadmap for next-generation High NA EUV systems, supporting node requirements for the coming decade while improving patterning cost.
Key Technologies Covered
- High NA EUV lithography
- 0.55 NA imaging capability
- Patterning cost reduction
- High NA value drivers for Logic and DRAM
- High-volume manufacturing
- High NA roadmap
