移至主內容

As semiconductor scaling evolves, what is the role of High-NA EUV lithography?

上午 10:05 - 上午 10:30

While the pace of classical dimensional scaling is moderating, performance targets for advanced technology nodes continue to accelerate, placing increasing demands on patterning, integration, and system-level optimization.

 

The introduction of High-NA EUV provides the resolution and patterning capabilities required to support future semiconductor roadmaps. As the industry pushes toward ever more ambitious performance and density targets, realizing the full value of these capabilities requires continued innovation across the ecosystem, including materials, patterning approaches, metrology, and design-technology co-optimization.

 

This talk will present key High-NA patterning results obtained at imec and discuss what they reveal about the future of semiconductor scaling. It will highlight how High-NA extends the industry's scaling toolbox and enables new pathways for continued progress, while underscoring the importance of close collaboration across the ecosystem to translate technological advances into manufacturable solutions.

 

The evolution of semiconductor scaling is not reducing the importance of patterning innovation. Rather, it is elevating its role within a broader framework of technology and system optimization, where High-NA EUV serves as a key enabler for sustaining future generations of performance scaling.

 

Key Technologies Covered

  • High-NA EUV lithography (0.55 NA) 
  • Advanced semiconductor patterning

Featured Speakers

Dr. Philippe Leray

Dr. Philippe Leray

Vice President R&D Advanced Patterning Development, imec

Philippe Leray joined imec in 2001, after being metrology group leader in imec until May 2018, he became the director of advanced patterning, then Vice President R&D of Angstrom Patterning Development in 2025. This department is composed of 150 experts in advanced lithography, imaging, materials, OPC, in-line metrology and inspection development for imec advanced nodes (CFET, High NA, backside patterning, 3DDRAM, etc...). His department is responsible of technical contents of 80 imec customers. During the 12 first years in imec, Dr Leray has been responsible of evaluation of overlay emerging techniques, OCD models developments and immersion defectivity. He contributed to more than 100 publications.