Integrated Dielectric, Metallization and Fine-Line Patterning for AI-Driven Packaging

AI-driven advanced packaging demands tightly integrated materials and processes to enable finer interconnects, higher density, and improved yield. This presentation introduces Qnity’s total solutions for advanced packaging, spanning dielectric, metallization, bumping and patterning technologies to support heterogeneous and 3D integration.

In advanced platforms, such as CoWoS, EMIB, and HBM, mixed-CD bumps require precise plating height control and superior coplanarity. As scaling progresses toward hybrid Cu bonding, fine-grain copper solutions are essential to reduce thermal budgets while maintaining reliability. Qnity Electronics has devoted significant efforts in developing materials to meet these evolving requirements. Key material offerings include tunable SnAg for micro-bumps and fine-grain copper systems for Cu–Cu direct and hybrid bonding.  In addition, DF-PID via formation combined with fine-line patterning enables high-resolution vias and 2 µm line/space metallization with tight CD control and low defectivity. Together, the total solution delivers a scalable, end-to-end materials platform that bridges dielectric, metallization, and patterning to enable next-generation high-density and 3D integrated semiconductor systems.

Key Technologies Covered

• Advanced Packaging polymer and metallization materials platform (Qnity)

• Polymer product offering for 3DIC

• DF dielectric for heterogeneous integration

• Advanced Packaging Metallization materials platform

• Precision electroplating for mixed-CD bump height control in CoWoS and EMIB

• Tunable SnAg micro-bump technology for AI/HPC applications

• Transition from micro-bumps to bump-less hybrid Cu-Cu bonding

• Fine-grain copper engineering to reduce annealing thermal budget

• Fine-line lithography