Advancing the Frontiers of SiC Power Devices across the Voltage Spectrum
Silicon carbide (SiC) power devices are driving the next generation of high-efficiency and high-voltage power electronics. Here, we will present A*STAR’s latest progress on the development of an 8-inch SiC power device platform, covering a broad range of device technologies from low-voltage switching to high-voltage power conversion applications. The platform includes the fabrication and characterization of 8-inch SiC planar MOSFETs, trench MOSFETs, and FinFET structures, demonstrating enhanced device performance, scalability, and manufacturability on large-area wafers. In addition, a 6.5 kV SiC PiN diode development will be presented to address high-voltage and high-power system requirements. Key achievements in device design, process integration, and electrical performance will be covered, highlighting the potential of 8-inch SiC technology for future energy-efficient power systems and industrial applications.
Key Technologies Covered
- Fabrication and characterization of 8-inch SiC planar MOSFETs, trench MOSFETs, and FinFET structures
- 6.5 kV SiC PiN diode development
