RAAAM Memory Technologies Ltd.
Dr. Robert Giterman, CEO, RAAAM Memory Technologies Ltd.
Robert Giterman is the Co-Founder and CEO of RAAAM Memory Technologies, a Bar-Ilan University and EPFL spin-off which commercializes GCRAM, the highest-density on-chip memory technology in standard CMOS. Robert holds a PhD in Electrical Engineering from Bar-Ilan University. Prior to establishing RAAAM, he conducted postdoctoral research at EPFL, Lausanne. Robert has authored over 50 peer-reviewed publications and holds 23 patents.
Topic:
Resolving the SRAM bottleneck using the highest density on-chip memory in standard CMOS
Abstract:
Modern AI and high-performance chips require vast on-chip SRAM—often exceeding 50% of chip area - yet SRAM scaling has stalled in advanced nodes, driving up footprint and fabrication costs. RAAAM’s patented GCRAM extends Moore’s Law for on-chip memory as a drop-in SRAM replacement, delivering up to 50% silicon area reduction and 3X power savings using standard CMOS manufacturing with zero added process cost. RAAAM‘s GCRAM technology has already been proven on silicon of leading foundries with 15 fully functional test-chips. RAAAM has signed a license agreement with a top tier multi-national semiconductor company and has established a partnership with leading semiconductor companies and foundries for GCRAM qualification in selected process nodes, including TSMC N2, Samsung SF2P and GlobalFoundries 22FDX.
Key Technologies Covered:
- Gain-Cell RAM (GCRAM) Embedded Memory IP
- Advanced Node SRAM Scaling Alternatives
- Standard CMOS Process Integration (Zero-Mask Overhead)
- Ultra-Low-Power & Dynamic Voltage Scaling
- Drop-In SRAM Macro Replacement
- Advanced Node Porting (FinFET, FD-SOI, GAA)
- Silicon-Proven Test Chip Validation
- Silicon Footprint & Die Cost Optimization
- Multi-Port High-Bandwidth Memory Architecture
- AI & HPC On-Chip Workload Acceleration