Multi-Domain Metrology Solutions for High-Yield Hybrid Bonding Process
As the semiconductor industry hits the physical boundaries of classic Moore’s Law scaling, advanced packaging has emerged as the primary vehicle for sustaining performance gains. Specifically, 2.5D and 3D chiplet architectures have become the foundational blueprint for modern HPC) and AI hardware designs. As traditional micro-bumps and solder bumps reach their physical limits at fine pitches, bonding for 3D chiplet must scale toward sub-micron pitch reductions to satisfy high-density interconnect demands, a breakthrough that can only be achieved by adopting hybrid copper bonding.
However, achieving a robust hybrid bonding process introduces a diverse set of manufacturing challenges spanning nano-scale surface preparation, thin film control, and mechanical integrity throughout the pre-bonding, bonding, and post-bonding stages. Industry experience shows that yield and reliability are highly sensitive to variations in copper recess, dielectric and metal film thickness, edge and surface topography, wafer warpage, and interfacial material properties, with nanometer-level deviations leading to voids, electrical failures, or degraded bond strength.
This presentation outlines how a multidisciplinary metrology approach—combining dimensional, materials, chemical, surface, and geometry measurements—provides comprehensive visibility into these critical parameters. Through selected use cases, the talk highlights how diverse metrology solutions enable tighter process windows, earlier detection of failure mechanisms, and scalable hybrid bonding for advanced packaging and heterogeneous integration roadmaps.
Key Technologies Covered
- 2.5D and 3D Packaging
- Die Stacking and Hybrid Bonding
- Die and Wafer Warp/Bow measurement
- Interconnects: TSVs, RDLs, and Cu Pads
- Wafer level metrology
- Wafer Edge Metrology
- Spectral Interferometry
- Optical Scatterometry
- Plating Bath Chemistry
- Machine-learning enhanced metrology
