ALD innovations for advanced semiconductor nodes
2:25 pm - 2:50 pm
The semiconductor industry continues to advance chip performance via transition to 3D device architectures, as well as breakthroughs in materials and process innovations. Atomic Layer Deposition (ALD) is an essential deposition technology for enabling these complex device structures, and for the introduction of new materials, films, and layers across Logic and DRAM technologies. ALD enables ultrathin, highly conformal films with excellent step coverage and atomic control, required in the AI era of angstrom scale technology nodes.
Herein, we will discuss ALD enabled current and future materials and process technologies for advanced semiconductor nodes.
Key Technologies Covered
- ALD for advanced semiconductor node manufacturing
- 3D device architecture enablement through next-generation deposition techniques
- Ultrathin, highly conformal film deposition with excellent step coverage
- Atomic-Scale Process Control for angstrom-level technology nodes
- Novel Materials Integration for next-generation logic and memory devices
- ALD process innovation for logic technologies and DRAM technologies
- New film and layer introduction for complex device structures
- Precursor and gas chemistry development supporting advanced deposition
- Materials & process co-innovation for angstrom-era chip scaling