Empowering Grid-to-Compute AI Power Infrastructure With Full-Spectrum, High-Performance, Energy Efficient and 300mm Scalable GaN-on-QST® Power Device Platform

2:50 pm - 3:15 pm

The CMOS fab-friendly and SEMI standard 200 mm and 300 mm commercial QST® (QROMIS Substrate Technology) engineered substrates enable fabrication of high-performance, cost-effective and fully scalable commercial Gallium Nitride (GaN) power devices in mainstream semiconductor fabs with breakdown voltages ranging from <100 V to 2,000 V and beyond. 

 

QROMIS (Silicon Valley based US Company), with its global strategic shareholders and manufacturing partners – Micron Technology Inc., Vanguard International Semiconductor Corp. (VIS), Shin-Etsu Chemical Co., Ltd. (SEC), SPARX Group Co., Ltd. and Tokyo Electron Venture Capital (TVC) –  is focused on propelling widespread energy efficient GaN power electronics for AI, industrial and automotive applications by QROMIS’ groundbreaking and patented QST® innovation (protected by ~300 worldwide patents) enabling an unmatched cost, performance and application scale for GaN power.

 

In this forum, status of 200 mm / 300 mm QST® substrate and high-performance GaN-on-QST® power device products, including full-rated, industrial and automotive grade 650 V and 1,200 V devices, from high volume CMOS manufacturing platforms and the company’s device development partner IMEC will be presented. Also, world record breaking and high-quality 650 V rated GaN on 300 mm QST® will be discussed with the developments towards commercialization. 

 

In conclusion, enablement of high-performance AI power infrastructure with GaN-on-QST® solutions will be summarized.

 

Key Technologies Covered

  • INNOVATION: Disruptive and Commercial Engineered Substrate Innovation QST® Enabling Full Potential of GaN Power
  • POWERING AI: <100 V to 2,000 V and Beyond GaN-on-QST® Power Devices Empowering Grid-to-Compute AI Power Infrastructure
  • MANUFACTURING: Status of CMOS Fab-Friendly, SEMI Standard and 300mm Scalable GaN-on-QST® Power Device Manufacturing in Mainstream Semiconductor Fabs

Featured Speakers

Mr. Cem Basceri

Mr. Cem Basceri

CEO, Chairman and Co-Founder, QROMIS, Inc.

Cem Basceri has spent more than 30 years in materials science and semiconductor technologies with various executive leadership positions across materials science and semiconductor technologies, with a proven track record of building, scaling and leading businesses ranging from venture-backed start-ups to Fortune 500 public companies including Motorola, Micron Technology, Intrinsic Semiconductor, CREE/Wolfspeed, Bridgelux and QROMIS.

 

Currently, Cem is the Co-Founder, CEO and Chairman of the Board of the privately held Silicon Valley company, QROMIS, Inc., headquartered in Santa Clara, California. The Company, the recipient of the EE Times’ Global Top 100 List and Frost & Sullivan’s 2024 Enabling Technology Leadership Award, and its manufacturing partners/licensees, Shin-Etsu Chemical Co., Ltd. (SEC) and Vanguard International Semiconductor Corp. (VIS), are the commercial QST® substrate, GaN-on-QST® epitaxy wafer and GaN-on-QST® device foundry service providers in the rapidly growing energy efficient GaN electronics industry by enabling a disruptive, CMOS fab-friendly 200mm and 300mm manufacturing, and economies of scale for high performance GaN adoption.

 

Cem holds more than 320 issued US and worldwide patents, a PhD degree in materials science and engineering (North Carolina State University) and MS/BS degrees in metallurgical and materials engineering (Orta Dogu Teknik Universitesi).