InP: unlocking the power of light integrated on a chip to build a fast and energy-efficient AI infrastructure.
As AI infrastructure scales, interconnect bandwidth and energy efficiency are becoming key system bottlenecks. While silicon photonics has driven early adoption, III-V materials - particularly Indium Phosphide (InP) - enable a more integrated approach. InP uniquely supports monolithic integration of high-power lasers and high-speed modulators on a single platform, reducing complexity and improving performance.
As a pure-play InP foundry, SMART Photonics has established a mature InP-based integration platform, enabling scalable, high-performance optical components. The presentation highlights how this proven platform, used in a monolithic fashion, or heterogeneously integrated with Silicon Photonics, supports next-generation interconnect architectures and accelerates the deployment of energy-efficient AI data centre infrastructure.
Key Technologies Covered
- InP-based photonic integrated circuits (PICs)
- High-power and high-efficiency laser integration
- High speed modulators
- Energy-efficient optical interconnects for AI data centres
- Photonic-electronic co-packaging (CPO / co-packaged optics)
- Epitaxial growth and wafer-scale III-V manufacturing
- Heterogeneous integration (III-V on silicon)
- Optical vs electrical interconnect scaling limits