Dr. Takashi Nakamura

Coming soon.

Theme: Ultra-high voltage devices using medium-volta

Abstract of Presentation

Using our proprietary technology, we have connected 1 kV-class SiC MOSFETs in series and parallel, creating a high-voltage switch module exceeding 20 kV.

It maintains the same switching speed as a standalone FET, with an operating frequency of up to 1 MHz.

This core technology enables unprecedented high-speed, high-frequency switching in applications above 10 kV.

Applications are diverse, including specialized components for semiconductor devices, insulation testing equipment, and low-temperature plasma generators.

As an example, we issued a press release announcing our success in completely decomposing PFAS using in-liquid plasma generated by a pulsed power supply utilizing our core technology.