Memory Innovations: Enabling and Empowering the AI revolution

3:40 pm - 4:05 pm

Continued advancements in memory and storage are foundational to the AI era we find ourselves in. To continue this exponential growth and fulfil demanding AI workloads, rapid pace of memory innovation is needed. Extending planar DRAM scaling through novel material and patterning innovations while exploring 3D DRAM as a robust platform for extended scaling are fundamental imperatives. Maintaining the rapid pace of High Bandwidth Memory development through architecture and technology is needed for upcoming platforms which require high density, speed and energy efficiency. These innovations require novel materials, precise metrology and defect detection, a thriving equipment development strategy and significant cross functional collaboration. Micron is the leader in delivering industry- leading performance and energy efficient products across a large portfolio of products driving today’s AI needs.

Key Technologies Covered

DRAM Technology Scaling
HBM Technology
CMOS Performance
Emerging Memory

Featured Speakers

Dr. Nirmal Ramaswamy

Corporate Vice President, Micron Technology

Nirmal Ramaswamy is currently the Corporate Vice President of DRAM Technology Group at Micron Technology Inc. He and his teams in Boise, Hiroshima and Taiwan are responsible for Micron’s industry leading DRAM Technology Development. He has a bachelor’s degree in Metallurgical Engineering from Indian Institute of Technology, Madras, India, a PhD in Materials Science and Engineering from Arizona State University and is a graduate of the Stanford Graduate School of Business Executive Program. Dr. Ramaswamy joined Micron in 2002 and has served in various leading roles in process development, process integration and technology development in DRAM, NAND and Emerging Memories. He holds more than 300 issued patents in the field of semiconductors.