+886.3.560.1777

English


Aqueous Materials for Advanced Lithography

Thursday, September 19
10:25am to 10:50am

Abstract:

Merck Performance Materials provides a broad material portfolio enabling advanced photolithography. Rinse material is a unique offering to alleviate capillary force hence mitigate pattern collapse in very fine photoresist pattern through reducing surface tension with novel surfactants. Based on the knowledge and know-hows acquired in the development of rinse materials for ArF dry/immersion lithography processes in the past decades, new material platforms have been developed to extend the technique to meet the ever critical requirements in the era of EUV lithography. AZ® Extreme 10 was commercialized as the world’s first rinse material dedicated for EUV lithography, designed for 22nm hp patterning. In the past few years, material development has been focused on further improving the compatibility with the new generations of EUV photoresists for finer pattern below 18nm hp and reducing photoresist residues during development process to enable manufacturing process of 7nm node and beyond. The latest emphasis is to develop novel materials to address stochastic effects which are crucial for the development of high-NA EUV lithography to enable further pattern scaling along the technology roadmap. We are committed to providing novel solutions to confront the increasing technical challenges in advanced patterning

Share page with AddThis