The marriage of EUV and DSA: leveraging the convergence of these technologies to
achieve 5 nm and beyond
James Lamb*, Mary Ann Hockey, Nick Brakensiek, Kui Xu, Richard Daugherty
Brewer Science, Inc., 2401 Brewer Drive, Rolla 65401 MO USA
Material challenges for directed self-assembly (DSA) block copolymers and successful implementation into manufacturing flows can be achieved in several ways. One proposed method is from block copolymer (BCP) publications on the topic of “rectification.” Using BCP for enhancement of the original photoresist (PR) images was first published in 2010. The approach we utilized was to quantify EUVL PR pattern fidelity as it applies to edge quality for high resolution sub-20-nm imaging. DSA provides this complementary lithography technique using EUVL PR templates trim etched into a 5-nm- thick organic guide layer. Subsequent steps consist of a hardmask and spin-on carbon layer pattern transferred through to the substrate. Quantifying the impact BCP has on specifically line edge roughness is summarized. The development of unique, low-Tg BCP monomers enables Brewer Science to consistently provide chemical platforms for optimization of critical dimension tolerances.
Key Words: EUVL PR, DSA, BCP, rectification, pattern fidelity